Gamma-Induced Changes in Optical Transmission of As-S Semiconductor Glasses

Mykhaylo Shpotyuk1 shpotyukmy [at] yahoo.com
Andriy Kovalenko
Ulyana Yakhnevych
Dmytro Teslyuk
  1. Department of Semiconductor Eletronics, Lviv Polytechnic National University, UKRAINE, Lviv, S. Bandery street 12
Abstract 

Compositional trends of γ-induced optical changes in chalcogenide glasses are studied with the binary As-S system. Effects of γ-irradiation and annealing are compared using to the changes measured in the fundamental optical absorption edge region

References 

[1] J. S. Sanghera, I. D. Aggarwal, J. Non-Cryst. Solids. 256-257 (1999) 6
[2] C. Schultz-Sellack, Ann. Phys. 139 (1870) 182.
[3] O. I. Shpotyuk, Opto-Electronics Rev. 11 (2003) 19.