Influence of the Deposition Time on the Structure and Optical Properties of Indium Sulfide Films (In2S3)

Roman Hlad1 roman.i.hlad [at] lpnu.ua
Pavlo Shapoval1
Vitalii Stadnik1
Martyn Sozanskiy1
Ruslana Guminilovych1
Yosyp Yatchyshyn1
  1. Analytical Chemistry Department, Lviv Polytechnic National University, Ukraine, Lviv, S. Bandera Street 12
Abstract 

The process of synthesis of indium sulphide (In2S3) semiconductor thin films by a chemical synthesis method was done. The acetic acid has been used as a complexing agent. Ivestigations of thin films properties were carried out by using X-ray powder diffraction, scanning eletron microscopy, optical spectroscopy. The phase composition, optical transmission and absorption spectra of In2S3 films were studied. The value of bang gap energy has been experimentally determined from spectral dependences of optical transmission of In2S3 films, and ranges from 2,31 to 2,55 eV.

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