semiconductor films

The process of synthesis ZnS and ZnSe thin films by a chemical bath deposition method (CBD) has been investigated. The phase composition, surface morphology and thickness of ZnS and ZnSe films were studied. The kinetic curves of ZnS and ZnSe synthesis was obtained and activation parameters were calculated. The correlation between thickness, morphology and activation energy have been established.

The process of synthesis of mercury selenide (HgSe) thin films by a chemical bath deposition method (CBD) with using different complexing agents (potassium rodanide, potassium iodide and sodium thiosulfate) has been investigated. The phase composition, crystal structure, absorption spectra, surface morphology of HgSe films were studied. The effect of nature of complexing agent on the properties of obtaining coatings was shown.

The process of synthesis of indium sulphide (In2S3) semiconductor thin films by a chemical synthesis method was done. The acetic acid has been used as a complexing agent. Ivestigations of thin films properties were carried out by using X-ray powder diffraction, scanning eletron microscopy, optical spectroscopy. The phase composition, optical transmission and absorption spectra of In2S3 films were studied. The value of bang gap energy has been experimentally determined from spectral dependences of optical transmission of In2S3 films, and ranges from 2,31 to 2,55 eV.

The process of synthesis ZnS and HgS thin films by a chemical bath deposition method (CBD) has been investigated. The phase composition, optical transmission, absorption spectra, surface morphology of films and structures based on ZnS and HgS films have been studied.