chemical deposition
Influence of the Deposition Time on the Structure and Optical Properties of Indium Sulfide Films (In2S3)
The process of synthesis of indium sulphide (In2S3) semiconductor thin films by a chemical synthesis method was done. The acetic acid has been used as a complexing agent. Ivestigations of thin films properties were carried out by using X-ray powder diffraction, scanning eletron microscopy, optical spectroscopy. The phase composition, optical transmission and absorption spectra of In2S3 films were studied. The value of bang gap energy has been experimentally determined from spectral dependences of optical transmission of In2S3 films, and ranges from 2,31 to 2,55 eV.