The Heat Treatment Influence on the Main Quality Indicators of Ag/n-n+GaAs Heterojunctions

Vadim Dmitriev1 dems562 [at] gmail.com
  1. Microelectronic information systems department, Zaporizhzhya State Engineering Academy, UKRAINE Zaporizhzhya, Soborny Ave., 226
Abstract 

The effect of heat treatment on the parameters and characteristics of Ag/n-n+GaAs heterojunctions is studied. Various methods for the Schottky barrier height and the nonideality factor determining have been examined and tested. The most accurate method for determining the heterojunction parameters using the current-voltage characteristic was found

References 

[1] P. Jayavel, J. Kumar, P. Ramasam, R. Premanand, “On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs”, Indian Journal of Engineering and Materials Sciences, Vol. 7, №5-6. – pp. 340–343, 2001.

[2] Dmy`triyev V.S. “Inzhektuyuchi bar'yerni perehody` na osnovi arsenidu galiya dlya pry`ladiv NVCh diapazonu” Progresy`vni texnologiyi ta pry`lady`, № 10(1), pp. 50-53, 2017.

[3] A. V. Belyaev, N. S. Boltovecz, E. F. Venger y` dr., “Fy`zy`chesky`e metodi dy`agnosty`ky` v my`kro- y` nanoelektrony`ke”, Khar`kov, Y`SMA, 284 p., 2011.

[4] S. M. Sze, K. K. Ng “Physics of Semiconductor Devices, 3rd Edition”, Hoboken, A John Wiley & Sons, Inc., 815 р., 2007.

[5] E. H. Rhoderick, R. H. Williams, “Metal-Semiconductor Contacts”, Oxford, Clarendon Press, 252 p., 1988.

[6] S. Chand, L. Kamar, “Origin of non-ideal currentvoltage characteristics of metal-semiconductor contact: A numerical study”, Indian Journal of Engineering & Materials Sciences. Vol. 7, № 5-6. pp. 268–273, 2000.

[7] Kudryk Ya.Ya., Shynkarenko V.V., Slipokurov V.S., Bigun R.I., Kudryk Ya.Ya, “Methods for determination of Schottky barrier height from I-V curves”, CriMiCo’2014, September 7-13, Sevastopol, Crimea, pp. 673-674. 2014.

[8] M. P. Hernández, C. F. Alonso, J. L. Peña, “Barrier height determination in homogeneous nonideal Schottky contacts”, Journal of Physics D: Applied Physics, Vol. 34, №8, pp. 1157–1162, 2001.

[9] N. Karaboga, S. Kockanat, H. Dogan, “The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony”, Applied Intelligence, Vol. 38, № 3. pp. 279–288, 2013.

[10] A. Ortiz-Conde, Y. Ma, J. Thomson, etc, “Direct extraction of semiconductor deviceparameters using lateral optimization method”, Solid-State Electronics, Vol. 43, №4. pp. 845–848, 1999.